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High efficiency, multi-band GaN RF transistors for 5G cellular base stations

We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations. 

 Recent Event 

Gallium Semi - EuMW 2023
EuMW 2023

We wanted to thank all the visitors who stopped by our booth and showed interest in our high efficiency, multi-band GaN RF transistors for 5G cellular base stations, radars and ISM. We hoped you enjoyed our latest products and demos, such as the GTH2e-2425300P, a 300W GaN RF power transistor for 2.4-2.5GHz frequency range.

For more information's and enquiries, please email: sales@galliumsemi.com

 News 

Feb 1, 2024

Unlocking the Future: GaN on SiC HEMTs Pave the Way for Game-Changing RF Energy Applications

Nov 17, 2023

Revolutionizing 5G Networks: Gallium Semiconductor's GaN Power Amplifiers Take Center Stage at EDICON

 Product Catalog 

Catalog Fall 2023

Featured Products

Game Screens

GTH0-0032150S
170W GaN RF Power Transistor
DC to 3.2GHz, 50V, Ni-360

Gallium Semi’s GTH0-0032150S is an unmatched 170W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for DC-3.2GHz frequency range. The GTH0-0032150S, operating from a 50-volt rail, offers a general-purpose broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH0-0032150S ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package.

GTH0-0037110S

GTH2r-2731150S
150W GaN RF Power Transistor
2.7 to 3.1GHz, 50V, 6.5x7 mm DFN

 

Gallium Semi’s GTH2r-2731150S is a pre-matched 150W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for 2.7-3.1GHz frequency range. The GTH2r-2731150S, operating from a 50-volt rail, achieves a saturated drain efficiency of over 64% (Psat) for S-band pulse radar applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH2r-2731150S ideal for linear and compressed amplifier circuits. The transistor is available in a 6.5 x 7 mm DFN package.

DFN65x7.jpg

GTH2r-3135125S
125W GaN RF Power Transistor
3.1 to 3.5GHz, 50V, ACP-462-2L

Gallium Semi’s GTH2r-3135125S is a pre-matched 125W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for 3.1-3.5GHz frequency range. The GTH2r-3135125S, operating from a 50-volt rail, achieves a saturated drain efficiency of over 56% (Psat) for S-band pulse radar applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH2r-3135125S ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead ACP-462 package.

ACP-462 2L.jpg
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