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 Coming Soon 

We're excited to be exhibiting our leading RF GaN power transistors at IMS 2023!

Visit us at Booth No.1316 to see our cutting-edge technology and learn how it can benefit your business. Don't miss out on this opportunity to connect with our experts and elevate your projects to new heights. See you at IMS 2023, our exhibition date: 13 - 15 June 2023.

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 Recent Event 

eumw 2022, GS booth

EuMW is the largest trade show dedicated to Microwaves and RF in Europe. 

To schedule a meeting with us, please email: sales@galliumsemi.com

 

High efficiency, multi-band GaN RF transistors for 5G cellular base stations

We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations. 

 Upcoming Event 

International Microwave Symposium, 11-16 June 2023, San Diego, CA
EUMW 2023, Messe Berlin Hub 27, 17-22 September 2023

Featured Products

Game Screens

110 Watt GaN Transistor
DC to 3.7 GHz, 50 Volt

The wide bandwidth of the GTH0-0037110S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

GTH0-0037110S

80 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt

The GT065D is a 80 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment. 

GT065D

150 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt

The GT135D is a 150 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment. 

GT135D
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