High efficiency, multi-band GaN RF transistors for 5G cellular base stations
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
We are a seasoned team of RF semiconductor experts with decades of extensive engineering, operations & management experience. We have a proven track record of success in developing and supplying high performance semiconductors for RF, microwave and related applications in cellular communications, satellite and defense-related markets worldwide.
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