High efficiency, multi-band GaN RF transistors for 5G cellular base stations
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
10 Watt GaN Transistor
DC to 8.0 GHz, 50 Volt
The GT010D is a 10 Watt (P3dB)
unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
30 Watt GaN Transistor
DC to 6.0 GHz, 50 Volt
The GT030D is a 30 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
80 Watt GaN Transistor
DC to 4.0 GHz, 50 Volt
The GT080D is a 80 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
About Us
We are a seasoned team of RF semiconductor experts with decades of extensive engineering, operations & management experience. We have a proven track record of success in developing and supplying high performance semiconductors for RF, microwave and related applications in cellular communications, satellite and defense-related markets worldwide.
Contact Us
Use the form below or drop us an email at sales@galliumsemi.com. We are incredibly responsive to customer inquiries and look forward to connecting with you.