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High efficiency, multi-band GaN RF transistors for 5G cellular base stations
Recent Event
EuMW is the largest trade show dedicated to Microwaves and RF in Europe.
To schedule a meeting with us, please email: sales@galliumsemi.com
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
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110 Watt GaN Transistor
DC to 3.7 GHz, 50 Volt
The wide bandwidth of the GTH0-0037110S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
80 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt
The GT065D is a 80 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
150 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt
The GT135D is a 150 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.