Coming Soon
We're excited to be exhibiting our leading RF GaN power transistors at IMS 2023!
Visit us at Booth No.1316 to see our cutting-edge technology and learn how it can benefit your business. Don't miss out on this opportunity to connect with our experts and elevate your projects to new heights. See you at IMS 2023, our exhibition date: 13 - 15 June 2023.
Highlighted News
Recent Event
EuMW is the largest trade show dedicated to Microwaves and RF in Europe.
To schedule a meeting with us, please email: sales@galliumsemi.com
High efficiency, multi-band GaN RF transistors for 5G cellular base stations
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
Upcoming Event
Featured Products
Game Screens
110 Watt GaN Transistor
DC to 3.7 GHz, 50 Volt
The wide bandwidth of the GTH0-0037110S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
80 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt
The GT065D is a 80 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
150 Watt GaN Transistor
DC to 3.2 GHz, 50 Volt
The GT135D is a 150 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.