High efficiency, multi-band GaN RF transistors for 5G cellular base stations
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
Recent Events
We had an amazing time showcasing our latest GaN-on-SiC RF power transistors and discussing the future of cellular base stations. We hope you enjoyed the show as much as we did.
For more informations and enquiries, please email: sales@galliumsemi.com
News
Sep 15, 2023
Gallium Semiconductor announced the availability of the GTH2e-2425300P
Aug 4, 2023
Gallium Semiconductor made it onto EE Times Top 100 Startups to watch in 2023
Ongoing Events
Online registration open up to and during the event until 22 September 2023. During the event, you can also register onsite from Saturday 16 September 2023 (16.00 -19.00) and from 08.00 each morning from Sunday 17 – Friday 22 September 2023.
Join us at EuMW 2023 (Booth No. 469C).
Featured Products
Game Screens
GTH0-0032150S
170W GaN RF Power Transistor
DC to 3.2GHz, 50V, Ni-360
Gallium Semi’s GTH0-0032150S is an unmatched 170W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for DC-3.2GHz frequency range. The GTH0-0032150S, operating from a 50-volt rail, offers a general-purpose broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH0-0032150S ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package.
GTH2r-2731150S
150W GaN RF Power Transistor
2.7 to 3.1GHz, 50V, 6.5x7 mm DFN
Gallium Semi’s GTH2r-2731150S is a pre-matched 150W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for 2.7-3.1GHz frequency range. The GTH2r-2731150S, operating from a 50-volt rail, achieves a saturated drain efficiency of over 64% (Psat) for S-band pulse radar applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH2r-2731150S ideal for linear and compressed amplifier circuits. The transistor is available in a 6.5 x 7 mm DFN package.
GTH2r-3135125S
125W GaN RF Power Transistor
3.1 to 3.5GHz, 50V, ACP-462-2L
Gallium Semi’s GTH2r-3135125S is a pre-matched 125W Psat gallium-nitride (GaN) high-electron-mobility transistor (HEMT) for 3.1-3.5GHz frequency range. The GTH2r-3135125S, operating from a 50-volt rail, achieves a saturated drain efficiency of over 56% (Psat) for S-band pulse radar applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the GTH2r-3135125S ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead ACP-462 package.
