High efficiency, multi-band GaN RF transistors for 5G cellular base stations
We are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
10 Watt GaN Transistor
DC to 8.0 GHz, 50 Volt
The GT010D is a 10 Watt (P3dB)
unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
30 Watt GaN Transistor
DC to 6.0 GHz, 50 Volt
The GT030D is a 30 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.
80 Watt GaN Transistor
DC to 3.7 GHz, 50 Volt
The GT080D is a 80 Watt (P3dB) unmatched GaN-on-SiC Transistor in surface mount DFN packaging. The wide bandwidth of the device makes it suitable for use in various applications including cellular base station, radar, communications, and test equipment.