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Applications

Designer Resources

Introducing our comprehensive Design Resources for Gallium Nitride (GaN) RF Power Transistors – your all-in-one solution for seamless integration and optimization of GaN-based RF power amplifiers. Whether you're an experienced RF engineer or a newcomer to GaN technology, our resource package is designed to streamline your design process and accelerate your product development.


Datasheets: Our design resources provide you with detailed datasheets for our GaN RF power transistors, offering a wealth of information about product specifications, electrical characteristics, and performance metrics. These datasheets serve as the foundation for understanding the capabilities of our GaN devices.


S-Parameter Data: Gain insights into the high-frequency behavior of our GaN transistors with S-parameter data. These parameters offer a deeper understanding of how our devices perform across various frequency ranges, enabling you to fine-tune your designs for optimal RF performance.
 

ADS/AWR Models: Our package includes accurate Advanced Design System (ADS) and Advanced Waveform Editor (AWR) models for our GaN RF power transistors. These models facilitate in-depth simulations, enabling you to fine-tune your designs for optimal RF performance.

Load Pull Data: Our load pull data is an invaluable resource for customizing your RF amplifier designs. This data helps you determine the most efficient impedance matching for your specific applications, maximizing power transfer and efficiency.


Demo Board Data: Get a head start on your design process with demo board data. These reference platforms, complete with schematics, layouts, and performance data, offer a real-world example of how to use our GaN RF power transistors effectively.


Reference Designs: We provide a selection of proven reference designs that showcase the potential of our GaN devices in various applications. These designs come complete with detailed schematics, layouts, and performance data, making it easy to adapt them to your specific needs.
 

Bill of Materials (BOM): Simplify your procurement process with a comprehensive BOM for each reference design. This list includes all the components you need to replicate the reference design, ensuring a hassle-free ordering process.


Gerber Files: Access Gerber files for PCB layouts associated with our reference designs. These files provide the necessary blueprints for fabricating PCBs that have been optimized for use with our GaN transistors.

Our Design Resources for GaN RF Power Transistors have been meticulously curated to empower you to design with confidence. Whether you're developing a high-power RF amplifier for telecommunications, radar systems, or wireless infrastructure, our comprehensive package ensures you have everything you need for a successful design process.
 

Experience the power of GaN technology with our design resources and transform your RF amplifier designs into cutting-edge, high-performance solutions. With our support, your innovation knows no bounds.
 

Reference Design

Part Name
Psat (W)
Freq (GHz)
Voltage (V)
Test Signal
GT010D-EVB-1
10
3.4 - 3.8
50
Pulse Width 100us, Duty Cycle 10%
GT010D-EVB-2
10
1.7 - 2.7
50
Pulse Width 100us, Duty Cycle 10%
GT010D-EVB-3
10
0.7 - 1.7
50
Pulse Width 100us, Duty Cycle 10%
GTH0-0080015S-EVB-1
15
3.1 - 3.5
50
CW
GTH0-0080015S-EVB-2
15
2.6 - 3.1
50
Pulse Width 100us, Duty Cycle 10%
GT020D-EVB-1
20
2.3 - 3.9
50
Pulse Width 100us, Duty Cycle 10%
GT020D-EVB-2
20
5.2 - 5.9
50
Pulse Width 100us, Duty Cycle 10%
GT030D-EVB-1
30
1.8 - 4.2
50
Pulse Width 100us, Duty Cycle 10%
GT030D-EVB-2
30
3.0 - 4.0
50
Pulse Width 100us, Duty Cycle 10%
GT030D-EVB-3
30
5.2 - 5.9
50
Pulse Width 100us, Duty Cycle 10%
GTH0-0070030S-EVB-1
30
2.4 - 3.1
50/28
Pulse Width 100us, Duty Cycle 10% & CW
GTH0-0060050S-EVB-1
50
2.9 - 3.1
50
Pulse Width 100us, Duty Cycle 10% & CW
GT065D-EVB-1
65
2.1 - 3.7
50
Pulse Width 100us, Duty Cycle 10%
GTH0-0037080S-EVB-1
80
2.9 - 3.1
50
Pulse Width 100us, Duty Cycle 10% & CW
GT090D-EVB-1
90
2.2 - 3.7
50
Pulse Width 100us, Duty Cycle 10%
GTH0-0037110S-EVB-1
110
2.9 - 3.1
50
Pulse Width 100us, Duty Cycle 10% & CW
GT135D-EVB-1
135
2.5 - 3.2
50
Pulse Width 100us, Duty Cycle 10%
GT135D-EVB-2
65
2.5 - 2.7
28
LTE 10MHz, 9.5dB PAPR
GTH0-0032150S-EVB-1
150
2.9 - 3.1
50
Pulse Width 100us, Duty Cycle 10% & CW
GTH2r-2731150S-EVB-1
150
2.7 - 3.1
50
Pulse Width 100us, Duty Cycle 10%
GTH2r-1014150S-EVB-1
150
1.2 - 1.4
50
Pulse Width 100us, Duty Cycle 10%
GTH2r-3135125S-EVB-1
125
3.1 - 3.5
50
Pulse Width 100us, Duty Cycle 10%
GTH2r-3135250S-EVB-1
250
3.1 - 3.5
50
Pulse Width 100us, Duty Cycle 10%
GTH2r-2731125S-EVB-1
125
2.7 - 3.1
50
Pulse Width 100us, Duty Cycle 10%
GTH2r-2731250S-EVB-1
250
2.7 - 3.1
50
Pulse Width 100us, Duty Cycle 10%
GTH0-0037110S-EVB-2
50
0.5 - 2.5
28
Pulse Width 100us, Duty Cycle 10% & CW
GTH2e-2425300P-EVB-1
50
2.4 - 2.5
50
Pulse Width 100us, Duty Cycle 10% & CW
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