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GaN Bare Dies

Gallium GaN on SiC HEMTs bare dies are designed with optimum thermal behaviour and ideal for making hybrids and modules. These offer maximum flexibility for customization of RF Power Amplifier performance.

Part Number
Min Freq (GHz)
Max Freq (GHz)
Pout (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package Type
Datasheet
Photo
GD010
0
8
15
19.8
61
50
Die
Preliminary
GD020
0
7
30
21.2
63
50
Die
Preliminary
GD030
0
6
50
21.2
64
50
Die
Preliminary
GD060
0
6
80
21.3
64
50
Die
Preliminary
GD080
0
3.7
100
21.4
66
50
Die
Advanced
GD090
0
3.7
110
21.6
67
50
Die
Preliminary
GD135
0
3.2
150
18.8
66
50
Die
Preliminary
GD160
0
3.2
160
18.5
65
50
Die
Advanced
GD200
0
3.2
200
18.4
64
50
Die
Advanced

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Typical Performances   1 Tone pulsed CW (10% duty cycle, 100μs width)

Measured in DFN 3x6 package

Source and Load impedance @ 2nd Harmonic are set to 10 Ohms, With proper 2nd Harmonic termination, expect +5% Efficiency for Source and similar with Drain 2nd Harmonic.

​

* All data @ 2.6 GHz

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