Discrete Unmatched GaN Transistors

We offer a line of packaged GaN-on-SiC HEMTs with no internal matching. These are packaged versions of our high performance discrete HEMT die with high reliability and excellent heat dissipation. Transistors are available in plastic overmold and air cavity ceramic packages with RoHS compliance

Part Number
Min Freq (GHz)
Max Freq (GHz)
Pout (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package Type
Datasheet
Photo
GT010D
0
8
15
19.8
61
50
DFN14 (6mmx3mm)
Preliminary
GT020D
0
7
30
21.2
63
50
DFN14 (6mmx3mm)
Preliminary
GT030D
0
6
50
21.2
64
50
DFN14 (6mmx3mm)
Preliminary
GT065D
0
3.7
80
21.3
64
50
DFN14 (6mmx3mm)
Preliminary
GT090D
0
3.7
110
21.6
67
50
DFN14 (6mmx3mm)
Preliminary
GT135D
0
3.2
150
18.8
66
50
DFN14 (6mmx3mm)
Preliminary

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Part Number
Min Freq (GHz)
Max Freq (GHz)
Pout (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package Type
Datasheet
Photo
GTH0-008015S
0
8
15
20
62
50
ACC NI-200
Advanced
GTH0-007030S
0
7
30
21.1
66
50
ACC NI-200
Advanced
GTH0-006050S
0
6
50
21.2
64
50
ACC NI-360
Advanced
GTH0-0037080S
0
3.7
80
21.5
66
50
ACC NI-360
Advanced
GTH0-0037110S
0
3.7
110
21.4
66
50
ACC NI-360
Advanced
GTH0-0029220S
0
2.9
220
20.7
67
50
ACC NI-360
Advanced

By downloading information from this site you agreed on our Terms of Use

Part Number
Min Freq (GHz)
Max Freq (GHz)
Pout (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package Type
Datasheet
Photo
GTH0-0029200P
0
2.9
110
21.4
66
50
ACC NI-360
Request

By downloading information from this site you agreed on our Terms of Use

* Power per path (push pull)

* Performances per path of the device

* All data @ 2.6 GHz

Typical Performances   1 Tone pulsed CW (10% duty cycle, 100μs width)

Source and Load impedance @ 2nd Harmonic are set to 10 Ohms, With proper 2nd Harmonic termination, expect +5% Efficiency for Source and similar with Drain 2nd Harmonic.