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GaN Bare Dies

Our bare die GaN-on-SiC HEMTs are designed for optimal thermal behaviour and ideal for designing hybrids and modules. These offer maximum flexibility for customization of RF Power Amplifier performance.

Part Name
Frequency (GHz)
Psat (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Die Size (mm)
ECCN
Datasheet
GD010
DC-8.0
10
20
61
50
0.90 X 0.75
EAR99
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GD020
DC-7.0
20
21
63
50
1.26 X 0.75
EAR99
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GD030
DC-6.0
30
21
64
50
1.63 X 0.75
EAR99
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GD060
DC-3.7
60
21
64
50
2.35 X 0.75
EAR99
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GD080
DC-3.7
80
21
66
50
2.74 X 0.82
EAR99
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GD090
DC-3.7
90
22
67
50
3.08 X 0.75
EAR99
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GD135
DC-3.2
135
19
66
50
3.48 X 0.80
EAR99
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GD160
DC-3.2
160
19
65
50
3.50 X 0.90
EAR99
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GD200
DC-3.2
200
19
64
50
3.50 X 0.90
EAR99
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