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Discrete Pre-matched GaN Transistors

We also offer a line of pre-matched GaN-on-SiC HEMTs with input internal matching for easy module and system designs. Transistors are available in air cavity plastic package with RoHS compliance.

Part Number
Min Freq (GHz)
Max Freq (GHz)
Pout (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package Type
Datasheet
Photo
GTH0-1524125S
1.5
2.4
125
19.7
72
50
ACP-462
Request
GTH0-1524250S
1.5
2.4
250
19.6
73
50
ACP-462
Request
GTH0-1524500S
1.5
2.4
500
18.8
68
50
ACP-800-2
Request
GTH0-2731125S
2.7
3.1
125
19.2
72
50
ACP-462
Request
GTH0-2731250S
2.7
3.1
250
19.5
71
50
ACP-462
Request
GTH0-2731500S
2.7
3.1
500
18.6
70
50
ACP-800-2
Request
GTH0-3338125S
3.3
3.8
125
19.1
71
50
ACP-462
Request
GTH0-3338250S
3.3
3.8
250
18.5
70
50
ACP-462
Request
GTH0-3338500S
3.3
3.8
500
18.2
69
50
ACP-800-2
Request

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* All data @ mid band

Typical Performances   1 Tone pulsed CW (10% duty cycle, 100μs width)

Source and Load impedance @ 2nd Harmonic are set to 10 Ohms, With proper 2nd Harmonic termination, expect +5% Efficiency for Source and similar with Drain 2nd Harmonic.

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