135W GAN HEMT, 50V, DC – 3.2GHz, Die
Operating Frequency Range: DC to 3.2GHz
Maximum Output Power (PSAT): 150W
Operating Drain Voltage: +50V
Maximum Drain Efficiency: 72%
Efficiency-Tuned P3dB Gain: 20 dB
Bare die shipped in Gel-Pak containers
The GD135 is an 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GD135 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations. Bare die are shipped in Gel-Pak containers for safe transport and storage.