Product Information

GT010D

10W GAN HEMT, 50V, DC – 8.0GHz, DFN

FEATURES

Operating Frequency Range: DC to 8.0GHz

Maximum Output Power (PSAT): 15W

Operating Drain Voltage: +50V

Maximum Drain Efficiency: 61%

Efficiency-Tuned P3dB Gain: 19.8 dB

Surface Mount Plastic Package

DESCRIPTION

The GT010D is a 15W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 8.0GHz on a 50V supply rail. The wide bandwidth of the GT010D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulsed mode of operations.
The device is housed in an industry-standard 6x3 mm surface mount DFN package. Lead-free and ROHS compliant.

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