GT080D
80W GAN HEMT, 50V, DC – 5.0GHZ, DFN
FEATURES

Operating Frequency Range: DC to 5.0GHz

Maximum Output Power (PSAT): 100W

Operating Drain Voltage: +50V

Maximum Drain Efficiency: 73.1%

Efficiency-Tuned P3dB Gain: 23.1 dB

Surface Mount Plastic Package

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DESCRIPTION

The GT080D is a 80W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 5.0GHz on a 50V supply rail. The wide bandwidth of the GT080D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations. The device is housed in an industry-standard 6x3 mm surface mount DFN package. Lead-free and
ROHS compliant.

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