80W GAN HEMT, 50V, DC – 3.7GHz, DFN
Operating Frequency Range: DC to 3.7GHz
Maximum Output Power (PSAT): 100W
Operating Drain Voltage: +50V
Maximum Drain Efficiency: 73.1%
Efficiency-Tuned P3dB Gain: 23.1 dB
Surface Mount Plastic Package
The GT080D is an 100W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GT080D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulsed mode of operations.
The device is housed in an industry-standard 6x3 mm surface mount DFN package. Lead-free and ROHS compliant.