GT135D
135W GAN HEMT, 50V, DC – 3.2GHZ, DFN
FEATURES

Operating Frequency Range: DC to 3.2GHz

Maximum Output Power (PSAT): 150W

Operating Drain Voltage: +50V

Maximum Drain Efficiency: 70%

Efficiency-Tuned P3dB Gain: 18 dB

Surface Mount Plastic Package

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DESCRIPTION

The GT135D is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GT135D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations. The device is housed in an industry-standard 6x3 mm surface mount DFN package. Lead-free and ROHS compliant.

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