top of page
Product Information
GT135D
135W GAN HEMT, 50V, DC – 3.2GHz, DFN
FEATURES
Operating Frequency Range: DC to 3.2GHz
Maximum Output Power (PSAT): 150W
Operating Drain Voltage: +50V
Maximum Drain Efficiency: 66%
Efficiency-Tuned P3dB Gain: 18.8 dB
Surface Mount Plastic Package
DESCRIPTION
The GT135D is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GT135D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both CW and pulsed mode of operations. The device is housed in an industry-standard 6x3 mm surface mount DFN package. Lead-free and ROHS compliant.
bottom of page