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Product Information
GTH0-0032150S
FEATURES
Operating Frequency Range: DC 0GHz to 3.2GHz
Maximum Output Power (PSAT): 150W
Operating Drain Voltage: +50V
Maximum Drain Efficiency: 53%
Efficiency-Tuned P3dB Gain: 10 dB
Air Cavity Ceramic Package
DESCRIPTION
The GTH0-0032150S is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates
from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GTH0-0032150S makes it
suitable for a variety of applications including cellular infrastructure, radar, communications, and test
instrumentation, and can support CW, linear and pulse operations.
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