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Product Information

GTH0-0032180P
FEATURES

Operating Frequency Range: DC to 3.2GHz

Maximum Output Power (PSAT): 180W

Operating Drain Voltage: +50V

Maximum Drain Efficiency: 66%

Efficiency-Tuned P3dB Gain: 18 dB

Air Cavity Ceramic Package

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DESCRIPTION

The GTH0-0032180P is a 180W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates
from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GTH0-0032180P makes it
suitable for a variety of applications including cellular infrastructure, radar, communications, and test
instrumentation, and can support CW, linear and pulse operations.

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