top of page
shutterstock_1430369297_edited.jpg

Product Information

GTH0-0037110S
FEATURES

Operating Frequency Range: DC to 3.7GHz

Maximum Output Power (PSAT): 110W

Operating Drain Voltage: 28V & 50V

Air Cavity Ceramic package

Suitable for CW, Pulsed, Linear applications

100% DC & RF Production Tested

GS_dfn.png
DESCRIPTION

The GTH0-0037110S is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates
from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GTH0-0037110S makes it
suitable for a variety of applications including cellular infrastructure, radar, communications, and test
instrumentation, and can support CW, linear and pulse operations.
The device is housed in an industry-standard NI-360 Air Cavity Ceramic package. Lead-free and
RoHS compliant

Download

By downloading information from this site you agree with our Terms of Use

bottom of page