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Product Information


Operating Frequency Range: DC to 3.7GHz

Maximum Output Power (PSAT): 110W

Operating Drain Voltage: 28V & 50V

Air Cavity Ceramic package

Suitable for CW, Pulsed, Linear applications

100% DC & RF Production Tested


The GTH0-0037110S is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates
from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GTH0-0037110S makes it
suitable for a variety of applications including cellular infrastructure, radar, communications, and test
instrumentation, and can support CW, linear and pulse operations.
The device is housed in an industry-standard NI-360 Air Cavity Ceramic package. Lead-free and
RoHS compliant


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