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Telecommunications Infrastructure
We offer an extensive portfolio of GaN-on-SiC power transistors for use in the design of 5G telecommunication systems supporting all global standards and frequency bands and power levels. Key features include high-power Doherty designs, ease of use with DPD systems, and air-cavity and plastic package options.
Dual Path Asymmetrical Doherty in DFN for MIMO Applications
Part Name | Frequency (GHz) | Psat (W) | Pave (W) | Linear Gain (dB) | Efficiency (%) | Voltage (V) | Package | Datasheets |
---|---|---|---|---|---|---|---|---|
GTH0-2327050A | 2.3-2.7 | 50 | 7 | 16 | 57 | 50 | DFN 6.5X7 | Request |
GTH0-2327100A | 2.3-2.7 | 100 | 14 | 15 | 57 | 50 | DFN 6.5X7 | Download ↓ |
GTH0-3338050A | 3.3-3.8 | 50 | 7 | 15 | 52 | 50 | DFN 6.5X7 | Request |
GTH0-3338100A | 3.3-3.8 | 100 | 14 | 14 | 51 | 50 | DFN 6.5X7 | Request |
GTH0-3742050A | 3.7-4.2 | 50 | 7 | 14 | 50 | 50 | DFN 6.5X7 | Request |
GTH0-3742100A | 3.7-4.2 | 100 | 14 | 13.5 | 48 | 50 | DFN 6.5X7 | Request |
GTH0-4450035A | 4.4-5.0 | 35 | 5 | 13 | 44 | 50 | DFN 6.5X7 | Request |
GTH0-4450070A | 4.4-5.0 | 70 | 7 | 13 | 42 | 50 | DFN 6.5X7 | Download ↓ |
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Single Ended GaN Driver in DFN for Macro Applications
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