top of page

Telecommunications Infrastructure

We offer an extensive portfolio of GaN-on-SiC power transistors for use in the design of 5G telecommunication systems supporting all global standards and frequency bands and power levels. Key features include high-power Doherty designs, ease of use with DPD systems, and air-cavity and plastic package options.

 Dual Path Asymmetrical Doherty in DFN for MIMO Applications 

Part Name
Frequency (GHz)
Psat (W)
Pave (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package
ECCN
Datasheets
GTH0-2327050A
2.3-2.7
50
7
16
57
50
DFN 6.5X7
EAR99
Request
GTH0-2327100A
2.3-2.7
100
14
15
57
50
DFN 6.5X7
EAR99
Download ↓
GTH0-3338050A
3.3-3.8
50
7
15
52
50
DFN 6.5X7
EAR99
Request
GTH0-3338100A
3.3-3.8
100
14
14
51
50
DFN 6.5X7
EAR99
Request
GTH0-3742050A
3.7-4.2
50
7
14
50
50
DFN 6.5X7
EAR99
Request
GTH0-3742100A
3.7-4.2
100
14
13.5
48
50
DFN 6.5X7
EAR99
Request
GTH0-4450035A
4.4-5.0
35
5
13
44
50
DFN 6.5X7
EAR99
Request
GTH0-4450070A
4.4-5.0
70
7
13
42
50
DFN 6.5X7
EAR99
Request

By downloading information from this site you agreed on our Terms of Use

 Single Ended GaN Driver in DFN for Macro Applications 

Part Name
Frequency (GHz)
Psat (W)
Pave (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package
ECCN
Datasheets
GTH0-2327080S
2.3-2.7
80
2.4
18
12
50
DFN 6.5X7
EAR99
Request
GTH0-3338080S
3.3-3.8
80
3
18
12
50
DFN 6.5X7
EAR99
Request
GTH0-3742080S
3.7-4.2
80
3.2
17
10
50
DFN 6.5X7
EAR99
Request
GTH0-4450080S
4.4-5.0
80
4.3
16
10
50
DFN 6.5X7
EAR99
Request

By downloading information from this site you agreed on our Terms of Use

bottom of page