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Telecommunications Infrastructure

We offer an extensive portfolio of GaN-on-SiC power transistors for use in the design of 5G telecommunication systems supporting all global standards and frequency bands and power levels. Key features include high-power Doherty designs, ease of use with DPD systems, and air-cavity and plastic package options.

 Dual Path Asymmetrical Doherty in DFN for MIMO Applications 

Part Name
Frequency (GHz)
Psat (W)
Pave (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package
Datasheets
GTH0-2327050A
2.3-2.7
50
7
16
57
50
DFN 6.5X7
Request
GTH0-2327100A
2.3-2.7
100
14
15
57
50
DFN 6.5X7
Download ↓
GTH0-3338050A
3.3-3.8
50
7
15
52
50
DFN 6.5X7
Request
GTH0-3338100A
3.3-3.8
100
14
14
51
50
DFN 6.5X7
Request
GTH0-3742050A
3.7-4.2
50
7
14
50
50
DFN 6.5X7
Request
GTH0-3742100A
3.7-4.2
100
14
13.5
48
50
DFN 6.5X7
Request
GTH0-4450035A
4.4-5.0
35
5
13
44
50
DFN 6.5X7
Request
GTH0-4450070A
4.4-5.0
70
7
13
42
50
DFN 6.5X7
Download ↓

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 Single Ended GaN Driver in DFN for Macro Applications 

Part Name
Frequency (GHz)
Psat (W)
Pave (W)
Linear Gain (dB)
Efficiency (%)
Voltage (V)
Package
Datasheets
GTH0-2327080S
2.3-2.7
80
2.4
18
12
50
DFN 6.5X7
Request
GTH0-3338080S
3.3-3.8
80
3
18
12
50
DFN 6.5X7
Request
GTH0-3742080S
3.7-4.2
80
3.2
17
10
50
DFN 6.5X7
Request
GTH0-4450080S
4.4-5.0
80
4.3
16
10
50
DFN 6.5X7
Request

By downloading information from this site you agree with our Terms of Use

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